プラズマ処理方法

Plasma processing method

Abstract

【課題】負荷インピーダンス測定回路の測定誤差や実プロセス中の高周波の波形ひずみ等に起因する負荷インピーダンス測定精度の低下を補償すること。 【解決手段】この整合ポイント補正のためのオートラーニングにおいては、実際の加工対象ではないダミーの半導体ウエハをチャンバ内に搬入し、実プロセスと同じ条件でプラズマプロセスを実行して、基準インピーダンスZ s の下で整合器にオートマッチングを行わせ、反射波測定回路で得られた反射波電力の測定値を取り込んでメモリに格納する。そして、ロギング終了後に、メモリに取り込んである全ての反射波電力測定値の中で最小のものを最小値決定処理で決定し、この反射波電力最小値が得られたときの基準インピーダンスを当該実プロセスに対応する整合ポイントとして登録する。 【選択図】 図10
<P>PROBLEM TO BE SOLVED: To compensate deterioration of load impedance measurement accuracy caused by measurement errors in a load impedance measuring circuit and waveform distortions, or the like, of high frequency in actual process. <P>SOLUTION: In the automatic learning for the matching point correction, a dummy semiconductor wafer which is not an actual processing object is transported into a chamber and plasma processing is carried out under the same condition as the actual process and automatic matching is made to perform to a matching unit under a reference impedance Z<SB>s</SB>, and the measured value of reflected wave power obtained by the reflected wave measuring circuit is fetched and stored in a memory. Then, after completion of logging, the smallest one among all the reflected wave power measured values stored in the memory is determined by the minimum value determination process, and the reference impedance when the reflected wave power minimum value is obtained is registered as a matching point corresponding to actual process. <P>COPYRIGHT: (C)2011,JPO&INPIT

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Cited By (3)

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    JP-2015062160-AApril 02, 2015パナソニックIpマネジメント株式会社, Panasonic Ip Management CorpPlasma processing device and plasma processing method
    KR-20160046918-AApril 29, 2016가부시끼가이샤교산세이사꾸쇼High-frequency power supply device, and plasma ignition method
    US-9451687-B2September 20, 2016Kyosan Electric Mfg. Co., Ltd.High-frequency power supply device, and plasma ignition method